陈伟，教授 , 理学博士，博士生导师 , 中青年骨干教师
E_mail: chen07308@hebtu.edu.cn
主要经历：
1980.9-1984.6，金沙以诚为本赢在信誉物理系，学士。
1995.9-1998.6，南京大学物理系，硕士。
2000.9-2003.6，山东大学物理与微电子学院，博士。
2005.9-2006.9， 丹麦技术大学物理系，客座教授。
研究方向：纳米体系功能材料，新型薄膜材料, 磁性材料，信息存储材料及器件。
教学工作：先后主讲《普通物理》、《量子力学》、《热力学与统计物理》、《数学物理方法》、《力学》、《热学》、《近代物理实验》、《半导体物理》（双语）等课程。
科研工作：作为第一主研人完成国家自然科学基金《（类钙钛矿/软磁材料）纳米复合材料的研究》项目的研究。参加国家高新技术研究发展计划(863计划)《基于磁性温度感知合金的核电站极端环境下智能保护技术研究》的研究工作。主持完成河北省自然科学基金 《双层钙钛矿锰氧化物的制备与磁热效应研究》、《磁性非挥发电阻式随机存储器研究》。主持完成河北省教育厅《具有磁性的RRAM存储器的研制》，石家庄市科学技术研究与发展计划课题《低贵稀土含量钕铁硼永磁材料的成分设计与工艺控制》，河北省人事厅国家和省留学人员科技活动项目择优资助项目《低贵稀土含量钕铁硼永磁材料的研究》，河北省教育厅博士基金《熔体快淬制备高性能低成本纳米复合永磁材料》，科技厅科技攻关项目《各向异性纳米复合永磁材料等研究》等课题。目前主持国家自然科学基金面上项目《金属氧化物半导体阻变存储器中的磁性开关效应研究》。在国内外重要学术期刊发表论文90余篇，申请发明专利5项。目前研究的磁性RRAM存储器方向的研究成果发表在Journal of Materials Chemistry C，Applied Physics Letters，Journal of Applied Physics，Applied Surface Science等国际重要学术期刊上。
研究生培养：已培养硕士生30余人，博士生5人。目前在读硕士生5人，博士生2人。
就业情况：已毕业博士生4人在高校任教，1人进入博士后工作站。已毕业硕士生大部分在高校和中学工作，部分进入国企或外企从事技术或销售工作。
发表文章：发表论文 90 余篇， SCI 收录 70余篇。
2013-2019年发表论文（*为责任作者）：
1. Electric field induced simultaneous change of resistance and magnetization in an Ag/Ti/Fe3O4/Pt device. Shu-xia Ren, Xu-tao Song, Guo-wei Sun, Xu Zhao, Hui-fang Yang and Wei Chen*, J. Mater. Chem. C, 2013, 1, 7879
2. Role of Oxygen Vacancy Arrangement on the Formation of a Conductive
Filament in a ZnO Thin Film, ZHAO Jing, DONG Jing-Yu, ZHAO Xu, Chen Wei*, Chin. Phys. Lett.,Vol. 31, No. 5 (2014) 057307
3. L. W. Song, S. S. Niu, Y. C. Sun, L. F. Hua, X. Zhao*, and W. Chen, Crystallinity dependence of resistive switching in Ti/Pr(Sr0.1Ca0.9)2Mn2O7/Pt:Filamentary versus interfacial mechanisms, Appl. Phys. Lett., 104, pp093502（1-4)，2014
4. Electric field-induced magnetic switching in Mn:ZnO film S. X. Ren, G. W. Sun, J. Zhao, J. Y. Dong, Y. Wei, Z. C. Ma, X. Zhao, and W. Chen*. Applied Physics Letters 104, 232406 (2014)
5. First-principles study of the formation and electronic structure of conductive filament in ZnO-based resistive random access memory, Zhao Jing, Dong Jing-Yu, Ren Shu-Xia, Zhang Li-Yong, Zhao Xu, and Chen Wei* , Chin. Phys. B Vol. 23, No. 12 (2014) 127301
6. Electric Field Control of Magnetism in Ti/ZnO/Pt and Ti/ZnO/SRO Devices Shu-xia Ren, Li-yong Zhang, Jing-yu Dong, Yan-fang Huang, Jia-jun Guo, Li Zhang, Jing Zhao, Xu Zhao, and Wei Chen*, Journal of Materials Chemistry C, 3(2015), 4077-4080.
7. Study on the Oxygen Vacancy Redistribution and the Mechanism of Electrical Manipulation of Ferromagnetism in Diluted Magnetic Oxides, Shuxia Ren, Jingyu Dong, Wei Chen*, Liyong Zhang, Jiajun Guo, Li Zhang, Jing Zhao, and Xu Zhao, J. Appl. Phys., 118, 233902 (2015)
8. Crystal micromorphologies and forming voltage effect on resistance switching behaviors in Ti/Pr(Sr0.1Ca0.9)2Mn2O7/Pt devices, Y. C. Sun, L. W. Song, W. Chen, X. Zhao*, Journal of Alloys and Compounds, 646 (2015) 477
9. Quantum conductance and magnetic properties in ZnO based resistive switching memory, Shuxia Ren, Jiajun Guo, Li Zhang, Xu Zhao, Wei Chen*，Journal of Alloys and Compounds 689 (2016) 800-804
10. Enhancement of electrically controlled ferromagnetism in metal-oxide films through magnetic transition metal doping. Shuxia Ren, Wei Chen*, Jiajun Guo, Huifang Yang, Xu Zhao. Journal of Alloys and Compounds 708 (2017) 484-488
11. Ultra-low voltage control of magnetic properties in amorphous MgO, Jiajun Guo, Liqian Wu, Shuxia Ren, Xin Kang, Wei Chen*, and Xu Zhao, APPLIED PHYSICS LETTERS 111, 192402 (2017)
12. Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface. Jiajun Guo, Shuxia Ren, Liqian Wu, Xin Kang, Wei Chen∗, Xu Zhao Applied Surface Science 434 (2018) 1074-1078
13. 过渡金属元素X (X = Mn, Fe, Co, Ni) 掺杂对ZnO 基阻变存储器性能的影响. 郭家俊，董静雨，康鑫，陈伟*，赵旭，物理学报 Acta Phys. Sin. Vol. 67, No. 6 (2018) 063101
14. Enhanced magnetic modulation in HfO2-based resistive memory with an Hf top electrode, Jiajun Guo, Xin Kang, Yingjie Gao, Wei Chen*, and Xu Zhao, 25 July 2018, Applied Physics Letters (Vol.113, Issue 4). 043502
15. Resistive switching and magnetism in transparent a-TiOx films deposited by magnetron sputtering, Shuxia Ren, * Lingzhi Tang, Qiang Sun, Zhenhua Li, Huifang Yang, Wei Chen**, Journal of Alloys and Compounds 763 (2018) 638-642
16. Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2-rGO hybrid, Liqian Wu, Jiajun Guo, Wei Zhong*, Wenjun Zhang, Xin Kang, Wei Chen*, Youwei Du，Applied Surface Science 463 (2019) 947-952
17. NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment. Xin Kang, Jiajun Guo, Yingjie Gao, Shuxi Ren, Wei Chen*, Xu Zhao, Applied Surface Science 480 (2019) 57–6295．
18. Improved Resistive Memory Based on ZnO-Graphene Hybrids through Redox Process of Graphene Quantum Dots. Tong Chen, Yingjie Gao, Wei Chen,* and Xu Zhao. Physica Status Solidi - Rapid Research Letters. 2019, 1900153.
19. Large Magnetization Modulation in ZnO-Based Memory Devices Embedded with Graphene Quantum Dots. Tong Chen, Wei Chen*, Lifu Liu, Yuan Wang and Xu Zhao. Physical Chemistry Chemical Physics. 21(2019) 16047-16054
20. Enhanced magnetic modulation in NiO-based memory device through ionic liquid pre-treatment. Xin Kang, Yingjie Gao, Lifu Liu, Wei Chen* and Xu Zhao. Appl. Phys. Lett. 115 (10), 103501 (2019)
